High frequency and large bandwidth are growing trends in communication radio-frequency devices. The LiNbO3 thin film material is expected to become the preferred piezoelectric material for high coupling resonators in the 5G frequency band due to its ultra-high piezoelectric coefficient and low loss characteristics. The main mode of laterally excited bulk acoustic wave resonators (XBAR) have an ultra-high sound velocity, which enables high-frequency applications. However, the interference of spurious modes is one of the main reasons hindering the widespread application of XBAR. In this paper, a Z-cut LiNbO3 thin film-based XBAR with arc-shaped electrodes is presented. We investigate the electric field distribution of the XBAR, while the irregular boundary of the arcshaped electrodes affects the electric field between the existing interdigital transducers (IDTs). The mode shapes and impedance response of the XBAR with arc-shaped electrodes and the XBARs with traditional IDTs are compared in this work. The fabricated XBAR on a 350 nm Z-cut LiNbO3 thin film with arc-shaped electrodes operating at over 5 GHz achieves a high effective electromechanical coupling coefficient of 29.8% and the spurious modes are well suppressed. This work promotes an XBAR with an optimized electrode design to further achieve the desired performance.
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